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| 580 Pleasant St. Watertown, MA 02172 PH: (617) 926-0404 FAX: (617) 924-1235 2N2221A Features * Meets MIL 19500 /255 * Collector - Base Voltage 75 V * Collector - Current 800 mA * High Speed, Medium Current Bipolar Transistor SWITCHING TRANSISTOR JAN, JANTX, JANTXV SMALL SIGNAL BIPOLAR NPN SILICON TO-18 COLLECTOR BASE EMITTER Maximum Ratings RATING Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25 C Derate above 25 C Total Device Dissipation @ TC = 25 C Derate above 25 C Operating Junction&Storage Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD TJ, Tstg VALUE 50 75 6 800 500 2.85 1.8 10.3 - 65 to + 200 UNIT Vdc Vdc Vdc mAdc mW mW/ C WATTS mW/ C C Thermal Characteristics CHARACTERISTIC Thermal Resistance, Junction to Ambient SYMBOL R JA MAX 350 UNIT C/W MSCO328A 01-29-98 DSW2N2221A < - > ( 33807) 2N2221A Electrical Characteristics (TA = 25 unless otherwise noted) C OFF CHARACTERISTIC Collector - Emitter Breakdown Voltage (1) ( IC = 10 mA dc, IB = 0 ) Collector - Base Breakdown Voltage (1) ( IC = 10 Adc, IE = 0 ) Emitter - Base Breakdown Voltage (1) ( IE = 10 Adc, IC = 0 ) Collector - Emitter Cutoff Current ( VCE = 50 Vdc, VBE(off) = 0 V ) Collector - Base Cutoff Current ( VCB = 60 Vdc, IE = 0 ) ( VCB = 60 Vdc, IE = 0, TA = 150 ) C Emitter - Base Cutoff Current ( VEB = 4 Vdc ) ON CHARACTERISTIC DC Current Gain ( IC = 100 A dc, VCE = 10 Vdc ) ( IC = 1 mA dc, VCE = 10 Vdc ) ( IC = 10 mA dc, VCE = 10 Vdc ) ( IC = 150 mA dc, VCE = 10 Vdc ) (1) ( IC = 500 mA dc, VCE = 10 Vdc ) (1) ( IC = 10 mA dc, VCE = 10 Vdc, TJ = -55 ) C Collector - Emitter Saturation Voltage ( IC = 150 mAdc, IB = 15 mAdc ) (1) ( IC = 500 mAdc, IB = 50 mAdc ) (1) Base - Emitter Saturation Voltage ( IC = 150 mAdc, IB = 15 mAdc ) (1) ( IC = 500 mAdc, IB = 50 mAdc ) (1) SYMBOL V(BR)CEO V(BR)CBO 75 V(BR)EBO 6 ICES 50 ICBO 10 10 IEBO 10 SYMBOL hFE MIN 30 35 40 40 20 15 VCE(sat) 0.3 1.0 VBE(sat) 0.6 1.2 2.0 Vdc Vdc Vdc Vdc MAX nAdc UNIT nAdc Adc nAdc Vdc Vdc MIN 50 MAX UNIT Vdc 150 120 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% MSCO328A 01-29-98 DSW2N2221A < - > ( 33807) 2N2221A Electrical Characteristics (TA = 25 unless otherwise noted) C SMALL - SIGNAL CHARACTERISTICS Output Capacitance ( VCB = 10 Vdc, IE = 0, 100kHz f 1 MHz ) Input Capacitance ( VEB = 0.5 Vdc, IC = 0, 100kHz f 1 MHz ) SWITCHING CHARACTERISTICS Turn - On Time ( VCC = 30 Vdc, IC = 150 mAdc, IB1 =15 mAdc) ( See FIGURE 1 ) Turn - Off Time ( VCC = 30 Vdc, IC = 150 mAdc, IB1 = - IB2 = 15 mAdc) ( See FIGURE 2 ) SYMBOL Cobo Cibo 25 SYMBOL ton MIN MAX pF UNIT MIN MAX 8 UNIT pF 35 toff 300 ns ns Small - Signal AC Characteristics (TA = 25 C) LOW FREQUENCY Common - Emitter Forward Current Transfer Ratio (IC = 1 mA, VCE = 10 V, f = 1kHz) HIGH FREQUENCY Common - Emitter Forward Current Transfer Ratio (IC = 20 mA, VCE = 20 V, f = 100 MHz) SYMBOL hfe MIN 30 |hfe| 2.5 *1 MAX UNIT Spice Model (based upon typical device characteristics) EG = 1.11 NK = 1.401 RC = 0.3567 VJE = 0.9036 VTF=10 ) Q2N2221A NPN ( IS = 426.3f XTI = 3.0 + NE = 2.935 IKF = 2.935 + NC = 1.88 IKR = 10.75 + FC = 0.5 CJE = 29.31p + ITF = 0.1383 XTF = 84.83m VAF =250.3 BF = 72.14 XTB = 1.5 BR = 11.49 CJC = 11.02p VJC = 0.3869 MJE = 0.4101 TR = 16.89n ISE = 48.14p ISC = 19.9f MJC = 0.3292 TF = 537.5p *1. Microsemi Corp. claims no responsibility for misapplication of Spice Model information. Spice modeling should be used as a precursor guide to in-circuit performance. Actual performance is the responsibility of the user/designer. MSCO328A 01-29-98 DSW2N2221A < - > ( 33807) 2N2221A TO 18 CASE OUTLINE 19.8 MIL TYP SQUARE DIE CHARACTERISTICS Back is Collector Chip Thickness is: 10 MILS TYP (E) (B) Metalization is: Top = Al, Back = Au DIE OUTLINE MSC0328A 11-10-97 DSW2N2221A< - > (33807) 2N2221A FIGURE 1 Saturated Turn-on Time Test Circuit FIGURE 2 Saturated Turn-off Time Test Circuit MSC0328A 11-10-97 DSW2N2221A< - > (33807) 2N2221A DC CURRENT GAIN TJ = 25 C VCE = 10 V 150 150 hFE CURRENT GAIN 125 typ. 100 125 100 75 75 50 50 25 25 0 -4 10 -3 10 -2 10 -1 10 0 10 0 IC COLLECTOR CURRENT (A) FIGURE 3 COLLECTOR SATURATION vs BASE CURRENT TJ = 25 C VCE, COLLECTOR-EMITTER (V) 1.0 1.0 0.8 IC = 10 mA 0.6 IC = 150 mA 0.4 IC = 500 mA 0.2 0.8 0.6 0.4 0.2 0.0 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 0.0 IB, BASE CURRENT (A) FIGURE 4 MSC0328A 11-10-97 DSW2N2221A< - > (33807) 2N2221A BASE SATURATION vs BASE CURRENT TJ = 25 C 1.2 1.2 1.1 IC = 500 mA 1.0 0.9 0.8 IC = 10 mA 0.7 0.6 0.5 -4 10 -3 10 -2 10 -1 10 0 10 VBE, BASE-EMITTER (V) 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -5 10 IC = 150 mA IB, BASE CURRENT (A) FIGURE 5 JUNCTION CAPACITANCE TJ = 25 C 100 kHz < f < 1 MHz JUNCTION CAPACITANCE (pF) 30 25 CIBO 20 15 10 COBO 5 0 .1 1 10 100 REVERSE JUNCTION VOLTAGE (V) FIGURE 6 MSC0328A 11-10-97 DSW2N2221A< - > (33807) 2N2221A SMALL SIGNAL CURENT GAIN vs COLLECTOR CURRENT TJ = 25 C VCE = 10 V f = 1kHz SMALL SIGNAL CURRENT GAIN, hfe 150 150 140 typ. 130 140 130 120 120 110 110 100 .1 1 10 100 100 COLLECTOR CURRENT (mA) FIGURE 7 HIGH FREQUENCY GAIN TJ = 25 C VCE = 20 V f = 100 MHz HIGH FREQUENCY GAIN | hfe | 5 5 4 4 3 typ. 2 3 2 1 1 0 1 10 0 100 COLLECTOR CURRENT (mA) FIGURE 8 MSC0328A 11-10-97 DSW2N2221A< - > (33807) 2N2221A GAIN vs FREQUENCY TJ = 25 C IC = 20 mA VCE = 20 V HIGH FREQUENCY GAIN | hfe | 40 40 30 30 20 20 10 typ. 10 0 10 100 0 1000 FREQUENCY (MHz) FIGURE 9 MSC0328A 11-10-97 DSW2N2221A< - > (33807) |
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